| 摘要 |
Light-emitting device (100) comprising:
a light-emitting diode (102) comprising:
an emitting layer comprising a ternary or quaternary semiconductor including a chemical element from column 13 of the periodic table of elements, among Al, Ga and In, of which the atomic composition varies over the thickness of the emitting layer, and/orat least two emitting layers each comprising such a semiconductor, the atomic compositions of said element being different from one layer to another,a device (108) that detects a wavelength and an intensity of a light emitted by the diode,a switched-mode electric power supply (110) able to power the diode with a periodic signal comprising a duty cycle α,a device (111) for controlling the switched-mode electric power supply which can alter α and a peak value of the periodic signal according to the values detected and target values. |
