SEMICONDUCTOR DEVICE

摘要

An emitter electrode includes a first electrode layer, a second electrode layer, and a third electrode layer. The first to third electrode layers are laid in this order on an emitter layer. A solder layer is further laid on the third electrode layer. The first electrode layer covers the emitter layer and a gate oxide film in a front surface of a semiconductor chip. A first electroconductive material forming the first electrode layer has AlSi as its main component. A second electroconductive material forming the second electrode layer has a linear expansion coefficient different from that of the first electroconductive material and is lower in mechanical strength than the first electroconductive material. A third electroconductive material constituting the third electrode layer has a linear expansion coefficient different from that of the first electroconductive material and has solder wettability higher than that of the first electrode layer.

主权项

1. A semiconductor device comprising:
a semiconductor layer; a first electrode layer provided on a front surface of the semiconductor layer and formed of a first electroconductive material; a second electrode layer laid on the first electrode layer and formed of a second electroconductive material having a linear expansion coefficient different from that of the first electroconductive material and lower in mechanical strength than the first electroconductive material; and a third electrode layer laid on the second electrode layer and formed of a third electroconductive material having a linear expansion coefficient different from that of the first electroconductive material and having solder wettability higher than that of the first electroconductive material.