| 摘要 |
An apparatus for chemical mechanical polishing and a control method of the same are provided to improve efficiency by controlling a sweeping speed of a pad conditioner to reduce the working hours. An apparatus for chemical mechanical polishing includes a platen, a polishing pad, a slurry supply arm, a polishing head assembly, a pad conditioner, and a controller. The platen rotates with a predetermined flat side. The polishing pad is formed to cover a top of the platen. The slurry supply arm supplies slurry on the polishing pad. The polishing head assembly polishes a wafer by rotating and pressing the wafer while moving from a center to an edge of the polishing pad. The pad conditioner sweeps from the center to the edge of the polishing pad while grinding a surface of the polishing pad at one side of the polishing head assembly. The controller generates a control signal to control the sweeping of the pad conditioner.
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