| 摘要 |
<P>PROBLEM TO BE SOLVED: To effectively polish a substrate with a simple constitution. <P>SOLUTION: In a CMP device 1, a thin film 4 is attached to a platen 2 and the polishing pad 5 is fixed so as to cover the thin film 4. A step 5A of the polishing pad 5 is formed above the platen 2 because the outer diameter of the thin film 4 is smaller than the outer diameter of the polishing pad 5. A polishing head 10 holding the substrate 6 is rotatably and reciprocatingly arranged above the polishing pad 5. The substrate 6 is pushed to the step 5A when polishing the substrate 6. The distance from the platen 2 to the upper surface of the polishing pad 5 is adjusted in by the thin film 4, thereby a polishing rate is controlled. <P>COPYRIGHT: (C)2013,JPO&INPIT |
