| 摘要 |
PROBLEM TO BE SOLVED: To provide a method in which deposition film having uniform film thickness and film quality is steadily obtained and the defects of a display are remarkably reduced by stabilizing a gas flow in a reaction vessel, and the yield at the time of is remarkably improved mass production in film deposition equipment by a plasma CVD method provided with a cylindrical electrode composing a vacuum chamber and a cylindrical supporting body as the counter electrode at the center of the vacuum chamber, in which a gaseous starting material is blown off from plural inlets provided on the electrode to form the deposited film on the supporting body, and to provide equipment for the method. SOLUTION: This equipment for producing the deposited film has plural tubular hollow parts respectively separately provided along the longitudinal direction at the inside of the cylindrical electrode and feeding a fluid for cooling the cylindrical electrode and the above gaseous starting material, and the method for producing the deposited film uses the same.
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