发明名称 REMOVAL OF PARTICLE CONTAMINATION ON PATTERNED SLILICON/SILICON DIOXIDE USING SUPERCRITICAL CARBON DIOXIDE/CHEMICAL FORMULATIONS
摘要 A cleaning composition for cleaning particulate contamination from small dimensions on semiconductor substrates. The cleaning composition contains supercritical CO2 (SCCO2), alcohol, fluoride source and, optionally, hydroxyl additive. Such cleaning composition overcomes the intrinsic deficiency of SCCO2 as a cleaning reagent, viz., the non-polar character of SCCO2 and its associated inability to solubilize species such as inorganic salts and polar organic compounds that are present in particulate contamination on wafer substrates and that must be removed from the semiconductor substrate for efficient cleaning. The cleaning composition enables damage-free, residue-free cleaning of substrates having particulate contamination on Si/SiO2 substrates.
申请公布号 WO2004042794(B1) 申请公布日期 2004.09.23
申请号 WO2003US34332 申请日期 2003.10.29
申请人 ADVANCED TECHNOLOGY MATERIALS, INC. 发明人 KORZENSKI, MICHAEL, B.;GHENCIU, ELIODOR, G.;XU, CHONGYING;BAUM, THOMAS, H.
分类号 B08B7/00;C11D7/02;C11D7/10;C11D7/32;C11D7/50;H01L21/306;H01L21/311;(IPC1-7):B08B3/00;H01L21/00;B05D1/00 主分类号 B08B7/00
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