发明名称 TEMPERATURE-INSENSITIVE BIAS CIRCUIT FOR HIGH-POWER AMPLIFIERS
摘要 An exemplary bias circuit is coupled to an amplifier. The bias circuit comprises a first bipolar transistor, a second bipolar transistor and a third bipolar transistor. The first bipolar transistor has a base connected to a first node, and the first node is connected to a reference voltage through a first resistor. The second bipolar transistor has a base connected to the first node. The third bipolar transistor has a collector connected to the first node and a base connected to an emitter of the first bipolar transistor at a second node. An emitter of the second bipolar transistor is connected to a base of a fourth bipolar transmitter associated with the amplifier, and the second bipolar transistor does not have a resistor connected to the emitter of the second bipolar transistor.
申请公布号 WO2005017956(A2) 申请公布日期 2005.02.24
申请号 WO2004US17664 申请日期 2004.06.04
申请人 SKYWORKS SOLUTIONS, INC.;YANG, YOUNGOO;CHOI, KEVIN;CHENG, NAI-CHUO 发明人 YANG, YOUNGOO;CHOI, KEVIN;CHENG, NAI-CHUO
分类号 H01L;H03F1/30;H03F3/04 主分类号 H01L
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