发明名称 THIN FILM MAGNETIC MEMORY
摘要 PROBLEM TO BE SOLVED: To prevent data write errors caused by magnetic noise from the wiring (peripheral wiring) arranged outside the memory array. SOLUTION: The peripheral wiring 270 is arranged around the memory array 10 and closest to the endmost write word line WWLn. The data write current Iww flows in a certain direction through the word line WWLn when selecting the corresponding memory cell line. In the peripheral wiring 270, operating current Ic for supplying the internal circuit 280 of supply voltage Vcc flows. The peripheral wiring 270 is selected to satisfy at least one of the two conditions below. (1) The operating current Ic does not flow when supplying the data write current Iww. (2) The data write current Iww and the operating current Ic are opposite to each other in their directions when their supply timing overlaps. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009021005(A) 申请公布日期 2009.01.29
申请号 JP20080228837 申请日期 2008.09.05
申请人 RENESAS TECHNOLOGY CORP 发明人 HIDAKA HIDETO
分类号 G11C11/15;H01L21/8246;H01L27/105 主分类号 G11C11/15
代理机构 代理人
主权项
地址