发明名称 SEMICONDUCTOR MEMORY DEVICE AND PROGRAMMING METHOD OF THE SAME
摘要 A semiconductor memory device may include a memory array including memory strings coupled between bit lines and a common source line. The semiconductor memory device may include a peripheral circuit coupled to the memory array through the bit lines. The peripheral circuit may be configured to generate a bit line voltage varied according to a temperature of the memory array and provide the bit line voltage to a selected bit line among the bit lines. The peripheral circuit may provide a program inhibit voltage to a non-selected bit line during a program operation.
申请公布号 US2016232975(A1) 申请公布日期 2016.08.11
申请号 US201514792853 申请日期 2015.07.07
申请人 SK hynix Inc. 发明人 OH Hae Soon
分类号 G11C16/10;G11C16/28;G11C16/04 主分类号 G11C16/10
代理机构 代理人
主权项 1. A semiconductor memory device, comprising: a memory array including memory strings coupled between bit lines and a common source line; and a peripheral circuit coupled to the memory array through the bit lines, and configured to generate a bit line voltage varied according to a temperature of the memory array and provide the bit line voltage to a selected bit line among the bit lines, and provide a program inhibit voltage to a non-selected bit line during a program operation.
地址 Icheon-si Gyeonggi-do KR