发明名称 |
SEMICONDUCTOR MEMORY DEVICE AND PROGRAMMING METHOD OF THE SAME |
摘要 |
A semiconductor memory device may include a memory array including memory strings coupled between bit lines and a common source line. The semiconductor memory device may include a peripheral circuit coupled to the memory array through the bit lines. The peripheral circuit may be configured to generate a bit line voltage varied according to a temperature of the memory array and provide the bit line voltage to a selected bit line among the bit lines. The peripheral circuit may provide a program inhibit voltage to a non-selected bit line during a program operation. |
申请公布号 |
US2016232975(A1) |
申请公布日期 |
2016.08.11 |
申请号 |
US201514792853 |
申请日期 |
2015.07.07 |
申请人 |
SK hynix Inc. |
发明人 |
OH Hae Soon |
分类号 |
G11C16/10;G11C16/28;G11C16/04 |
主分类号 |
G11C16/10 |
代理机构 |
|
代理人 |
|
主权项 |
1. A semiconductor memory device, comprising:
a memory array including memory strings coupled between bit lines and a common source line; and a peripheral circuit coupled to the memory array through the bit lines, and configured to generate a bit line voltage varied according to a temperature of the memory array and provide the bit line voltage to a selected bit line among the bit lines, and provide a program inhibit voltage to a non-selected bit line during a program operation. |
地址 |
Icheon-si Gyeonggi-do KR |