BIPOLAR SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING THE SAME
摘要
<p>A process for manufacturing a bipolar type semiconductor device in which at least a part of a region where an electron and a hole are recombined during current flowing is formed with a silicon carbide epitaxial layer that has been grown from the surface of a silicon carbide substrate, is characterized by that the surface of the silicon carbide substrate is treated by hydrogen etching and the epitaxial layer is then formed by the epitaxial growth of silicon carbide from the treated surface. A propagation of a basal plane dislocation to the epitaxial layer can be further reduced by treating the surface of the silicon carbide substrate by using chemical mechanical polishing and hydrogen etching in this order.</p>
申请公布号
EP1739726(A1)
申请公布日期
2007.01.03
申请号
EP20050721512
申请日期
2005.03.25
申请人
THE KANSAI ELECTRIC POWER CO., INC.;CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY