Crystallization method of thin film transistor, thin film transistor array panel and manufacturing method for thin film transistor array panel

摘要

Exemplary embodiments of the invention disclose a method of manufacturing a thin film transistor array panel having reduced overall processing time and providing a uniform crystallization. Exemplary embodiments of the invention also disclose a crystallization method of a thin film transistor, including forming on a substrate a semiconductor layer including a first pixel area, a second pixel area, and a third pixel area. The crystallization method includes crystallizing a portion of the semiconductor layer corresponding to a channel region of a thin film transistor using a micro lens array.

主权项

1. A thin film transistor array panel, comprising:
a substrate; a gate line disposed on the substrate and comprising a gate electrode; a gate insulating layer disposed on the gate line; a semiconductor layer disposed on the gate insulating layer and comprising a first region and a second region; a data line disposed on the semiconductor layer and crossing the gate line; a source electrode connected to the data line; a drain electrode facing the source electrode; and a passivation layer disposed on the data line, the source electrode, and the drain electrode, wherein the first region comprises crystalline silicon and the second region comprises amorphous silicon, wherein the first region is disposed to correspond to the channel region of a thin film transistor and the second region is disposed around the first region, and wherein a crystalline silicon portion of the first region of the semiconductor layer comprises the channel region and has an area larger than the channel region, and wherein the second region of the semiconductor layer comprises portions of the semiconductor layer that are not in the first region.