Nitride semiconductor component and process for its production

摘要

A process for the production of a layer structure of a nitride semiconductor component on a silicon surface, comprising:
provision of a substrate having a silicon surface;deposition of an aluminium-containing nitride nucleation layer on the silicon surface of the substrate;optional: deposition of an aluminium-containing nitride buffer layer on the nitride nucleation layer;deposition of a masking layer on the nitride nucleation layer or, if present, on the first nitride buffer layer;deposition of a gallium-containing first nitride semiconductor layer on the masking layer,

wherein the masking layer is deposited in such a way that, in the deposition step of the first nitride semiconductor layer, initially separate crystallites grow that coalesce above a coalescence layer thickness and occupy an average surface area of at least 0.16 μm2 in a layer plane of the coalesced nitride semiconductor layer that is perpendicular to the growth direction.

主权项

1. A nitride semiconductor component comprising:
a substrate with a silicon surface, an aluminum-containing nitride nucleation layer on the silicon surface of the substrate, an aluminum-containing nitride buffer layer on the aluminum-containing nitride nucleation layer, a masking layer of silicon nitride on the aluminium-containing nitride buffer layer, a gallium-containing first nitride semiconductor layer on the masking layer of silicon nitride, the gallium-containing first nitride semiconductor layer having a structure of coalesced crystallite growth islands, wherein starting at a distance of at least 600 nm from the masking layer of silicon nitride the gallium-containing first nitride semiconductor layer is at least 80% closed, wherein layer planes above the distance of at least 600 nm from the masking layer of silicon nitride exhibit an average surface area per crystallite growth island of at least 0.16 μm2, and adjoining the gallium-containing first nitride semiconductor layer is a layer sequence formed by an aluminum-containing nitride intermediate layer that has a thickness range of 8 nanometers to 15 nanometers, and
a gallium-containing second nitride semiconductor layer on the aluminum-containing nitride intermediate layer.