Memory device and its manufacturing method

摘要

Disclosed is a memory device comprising: a semiconductor layer; a source formed in the semiconductor layer; a drain formed in the semiconductor layer, the drain being separated from the source; a gate dielectric layer formed on the semiconductor layer, the gate dielectric layer being formed between the source and the drain; a first gate electrode formed on the gate dielectric layer; a dielectric layer formed below the semiconductor layer; a second gate electrode formed below the dielectric layer; and a ferroelectric capacitor electrically connected to the second gate electrode.