| 发明名称 | Semiconductor device and manufacturing method thereof | ||
| 摘要 | In a method for manufacturing a semiconductor device, a fin structure including a first semiconductor layer, an oxide layer disposed over the first semiconductor layer and a second semiconductor layer disposed over the oxide layer is formed. An isolation insulating layer is formed so that the second semiconductor layer of the fin structure protrudes from the isolation insulating layer while the oxide layer and the first semiconductor layer are embedded in the isolation insulating layer. A third semiconductor layer is formed on the exposed second semiconductor layer so as to form a channel. | ||
| 申请公布号 | US9425313(B1) | 申请公布日期 | 2016.08.23 |
| 申请号 | US201514793632 | 申请日期 | 2015.07.07 |
| 申请人 | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. | 发明人 | Chen Chao-Hsuing;Chen Hou-Yu;Lin Chie-Iuan;Chao Yuan-Shun;Li Kuo Lung |
| 分类号 | H01L29/78;H01L29/06;H01L29/66;H01L21/02 | 主分类号 | H01L29/78 |
| 代理机构 | McDermott Will & Emery LLP | 代理人 | McDermott Will & Emery LLP |
| 主权项 | 1. A method for manufacturing a semiconductor device, comprising: forming a fin structure including a first semiconductor layer, an oxide layer disposed over the first semiconductor layer and a second semiconductor layer disposed over the oxide layer; forming an isolation insulating layer so that the second semiconductor layer of the fin structure protrudes from the isolation insulating layer and is exposed while the oxide layer and the first semiconductor layer are embedded in the isolation insulating layer; and forming a third semiconductor layer to entirely cover the exposed second semiconductor layer so as to form a channel of the semiconductor device. | ||
| 地址 | Taipei TW | ||