| 摘要 |
The objective of the present invention is to provide a nitride semiconductor device that prevents breakdown of a gate insulating film and is capable of normally-off bidirectional operation having increased reliability. A nitride semiconductor element (10) is provided with a first MOSFET unit (30) and a second MOSFET unit (31); and a first SBD metal electrode (28) and a second SBD metal electrode (29) provided between a first gate electrode (26) and a second gate electrode (27) form a Schottky junction with an AlGaN layer (20). Also, the first SBD metal electrode (28) and a first electrode (24) are connected and are electrically shorted, and the second SBD metal electrode (29) and a second electrode (25) are connected and are electrically shorted. |
