SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

摘要

The present disclosure relates to a semiconductor device including an oxygen gettering layer between a group III-V compound semiconductor layer and a dielectric layer, and a method of fabricating the semiconductor device. The semiconductor device may include a compound semiconductor layer; a dielectric layer disposed on the compound semiconductor layer; and an oxygen gettering layer interposed between the compound semiconductor layer and the dielectric layer. The oxygen gettering layer includes a material having a higher oxygen affinity than a material of the compound semiconductor layer.

主权项

1. A semiconductor device comprising:
a compound semiconductor layer comprising at least one element from Groups III through VI; a dielectric layer disposed on the compound semiconductor layer; an oxygen gettering layer interposed between the compound semiconductor layer and the dielectric layer, the oxygen gettering layer comprising a material having a higher affinity for oxygen than a material of the compound semiconductor layer; and a passivation layer interposed between the compound semiconductor layer and the oxygen gettering layer, the passivation layer comprising at least one of S, N, F, Cl, and H formed on a surface of the compound semiconductor layer.