CMOS TRANSISTORS WITH IDENTICAL ACTIVE SEMICONDUCTOR REGION SHAPES

摘要

A disposable semiconductor material is deposited to form disposable semiconductor material portions on semiconductor fins. A first dielectric liner is deposited and patterned to form openings above a first set of disposable semiconductor material portions on a first semiconductor fin. The first set of disposable semiconductor material portions is replaced with a first set of active semiconductor regions by a combination of an etch and a selective epitaxy process that deposits a first semiconductor material. A second dielectric liner is deposited and patterned to form openings above the second set of disposable semiconductor material portions. The second set of disposable semiconductor material portions is replaced with a second set of active semiconductor regions employing another epitaxy process that deposits a second semiconductor material. The active semiconductor regions can have the same faceting profile irrespective of the semiconductor materials therein.

主权项

1. A semiconductor structure comprising:
a first fin field effect transistor and a second fin field effect transistor located on a substrate; a first dielectric liner comprising a first dielectric material and laterally contacting a source region and a drain region of said first fin field effect transistor; another first dielectric liner comprising said first dielectric material and laterally contacting a source region and a drain region of said second fin field effect transistor; a second dielectric liner comprising a second dielectric material and contacting top surfaces of said source region and said drain region of said first fin field effect transistor; and another second dielectric liner comprising said second dielectric material and including a portion that has an L-shaped vertical cross-sectional shape and laterally surrounds said another first dielectric liner.