发明名称 半導体装置
摘要 An edge termination region (100) which surrounds an active region (101) includes an electric field reduction mechanism including guard rings (2), first field plates (4) which come into contact with the guard rings (2), and second field plates (7) which are provided on the first field plates (4), with an interlayer insulating film (5) interposed therebetween. The second field plate (7) is thicker than the first field plate (4). A gap between the second field plates (7) is greater than a gap between the first field plates (4). A barrier metal film (6) is provided between the second field plate (7) and the interlayer insulating film (5) so as come into conductive contact with the second field plate (7). A gap between the barrier metal films (6) is equal to the gap between the first field plates (4). Therefore, even in a structure including the first and second field plates (4, 7), it is possible to improve the effect of shielding an external charge.
申请公布号 JP5949941(B2) 申请公布日期 2016.07.13
申请号 JP20140550154 申请日期 2013.11.21
申请人 富士電機株式会社 发明人 阿形 泰典;椎木 崇;曹 大為
分类号 H01L29/06;H01L29/41;H01L29/861;H01L29/868 主分类号 H01L29/06
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