| 摘要 |
A semiconductor device comprises a semiconductor substrate; a semiconductor layer having a higher resistance than that of said semiconductor substrate and provided on a top surface of said semiconductor substrate; a gate electrode provided on a gate insulating film on the top surface of said semiconductor layer; a drain layer of a first conductivity type selectively provided in a location in said semiconductor layer in one side of said gate electrode; a drain electrode connected to said drain layer; a source layer of the first conductivity type selectively provided in a location in said semiconductor layer in the other side of said gate electrode; an element-side connecting portion selectively provided on said semiconductor layer, which does not reach a channel portion between said source layer and said drain layer of said semiconductor layer and also does not reach to said semiconductor substrate, and which is in contact with said source layer and has lower resistance than that of said semiconductor layer; a contact-side connecting portion selectively provided on said semiconductor layer, having lower resistance than said semiconductor layer and extending deeper toward said semiconductor substrate than said element-side connecting portion; a first source electrode connecting said source layer, said element-side connect portion and said contact-side connect portion; and a bottom electrode provided on the bottom surface of said semiconductor substrate in connection therewith.
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