发明名称 |
PHOTOLITHOGRAPHIC METHODS |
摘要 |
Provided are photolithographic methods. The method comprise: (a) providing a semiconductor substrate comprising an organic layer to be etched; (b) applying a layer of a photoresist composition directly on the organic layer, wherein the photoresist composition comprises: a resin comprising an acid cleavable leaving group, the cleavage of which forms an acid group and/or an alcohol group; a photoacid generator; and a solvent; (c) exposing the photoresist layer to activating radiation through a patterned photomask; (d) heating the photoresist layer, wherein acid generated by the acid generator causes cleavage of the acid cleavable leaving group, thereby forming the acid group and/or the alcohol group; (d) developing the exposed photoresist composition layer with an organic solvent developer to form a negative resist pattern comprising the acid group and/or the alcohol group; (e) applying a silicon-containing composition over the resist pattern, wherein the composition comprises a silicon-containing polymer and a solvent and is free of crosslinkers; (f) rinsing residual silicon-containing composition from the substrate, leaving a portion of the silicon-containing polymer on a surface of the resist pattern; and (g) selectively etching the organic layer. The methods find particular applicability in the manufacture of semiconductor devices for providing high resolution patterns. |
申请公布号 |
US2016187782(A1) |
申请公布日期 |
2016.06.30 |
申请号 |
US201514971092 |
申请日期 |
2015.12.16 |
申请人 |
Dow Global Technologies LLC ;Rohm and Haas Electronic Materials LLC |
发明人 |
Hustad Phillip D.;Park Jong Keun |
分类号 |
G03F7/40;H01L21/311;H01L21/02;H01L21/027 |
主分类号 |
G03F7/40 |
代理机构 |
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代理人 |
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主权项 |
1. A photolithographic method, comprising:
(a) providing a semiconductor substrate comprising an organic layer to be etched; (b) applying a layer of a photoresist composition directly on the organic layer, wherein the photoresist composition comprises: a resin comprising an acid cleavable leaving group, the cleavage of which forms an acid group and/or an alcohol group; a photoacid generator; and a solvent; (c) exposing the photoresist layer to activating radiation through a patterned photomask; (d) heating the photoresist layer, wherein acid generated by the acid generator causes cleavage of the acid cleavable leaving group, thereby forming the acid group and/or the alcohol group; (d) developing the exposed photoresist composition layer with an organic solvent developer to form a negative resist pattern comprising the acid group and/or the alcohol group; (e) applying a silicon-containing composition over the resist pattern, wherein the composition comprises a silicon-containing polymer and a solvent and is free of crosslinkers; (f) rinsing residual silicon-containing composition from the substrate, leaving a portion of the silicon-containing polymer on a surface of the resist pattern; and (g) selectively etching the organic layer. |
地址 |
Midland MI US |