High mobility power metal-oxide semiconductor field-effect transistors

摘要

High mobility P-channel power metal oxide semiconductor field effect transistors. In accordance with an embodiment of the present invention, a power MOSFET is fabricated such that the holes flow in an inversion/accumulation channel, which is along the (110) crystalline plane, or equivalents, and the current flow is in the [110] direction, or equivalents, when a negative potential is applied to the gate with respect to the source. The enhanced channel mobility of holes leads to a reduction of the channel portion of the on-state resistance, thereby advantageously reducing total “on” resistance of the device.

主权项

1. A vertical trench silicon MOSFET comprising:
a (110) wafer including:
an orientation flat;a trench perpendicular to the orientation flat of the (110) wafer, wherein the trench includes a plurality of trench surfaces; anda channel, wherein the orientation flat is a [111] directed flat, and wherein the trench surfaces are bounded by {111} equivalent planes.