发明名称 薄膜形成装置、薄膜形成方法
摘要 PROBLEM TO BE SOLVED: To provide a technology capable of generating a high quality thin film.SOLUTION: A thin film formation system 1 includes: a plasma generation part 3 which generates plasma; a base material holding part 2 which holds a base material 10; a conductive dividing plate 4 which divides a plasma chamber Q1 in which the plasma generation part 3 is disposed from a film formation chamber Q2 in which the base material holding part 2 is disposed; a plasma material gas supply part 5 which supplies a gas that is a plasma material to the plasma chamber Q1; a film formation material gas supply part 7 which supplies a gas that is a film formation material to the film formation chamber Q2; and a pulse power source 9 which applies a pulse voltage to an area between the dividing plate 4 and the base material holding part 2.
申请公布号 JP6002522(B2) 申请公布日期 2016.10.05
申请号 JP20120213616 申请日期 2012.09.27
申请人 株式会社SCREENホールディングス 发明人 大澤 篤史;米山 典孝;羽田 浩二;松葉 正剛;福島 和宏
分类号 H01L21/205;C23C16/455;C23C16/503;C23C16/511;H01L21/31;H05H1/46 主分类号 H01L21/205
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