| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a GaN-based LED element for providing excellent light emitting output that can be suitably used for the purpose of lighting or the like by reducing a problem of light absorption by a pad electrode. <P>SOLUTION: The GaN-based LED element 100 includes a substrate 101 and a semiconductor laminated body 102 formed of a plurality of GaN-based semiconductor layers formed on the substrate. On a p-type layer 102-3, a light transmitting conductor oxide film 104, a positive pad electrode 105, and a connecting electrode 106 are formed. The conductor oxide film 104 and the positive pad electrode 105 are not overlapped with each other and current is supplied to the p-type layer 102-3 from the positive pad electrode 105 through the conductor oxide film 104. <P>COPYRIGHT: (C)2008,JPO&INPIT |
