发明名称 |
Method for producing a high quality useful layer on a substrate |
摘要 |
A method for producing a high quality useful layer of semiconductor material on a substrate. The method includes implanting at least two different atomic species into a face of a donor substrate to a controlled mean implantation depth to form a weakened zone therein and to define a useful layer. The implanting step is conducted to minimize low-frequency roughness at the weakened zone. Next, the method includes bonding a support substrate to the face of the donor substrate, and detaching the useful layer from the donor substrate along the weakened zone. A structure is thus formed that includes the useful layer on the support substrate with the useful layer presenting a surface for further processing. The technique also includes thermally treating the structure to minimize high-frequency roughness of the surface of the useful layer. The result is a surface having sufficient smoothness so that chemical mechanical polishing (CMP) is not needed.
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申请公布号 |
US2006223283(A1) |
申请公布日期 |
2006.10.05 |
申请号 |
US20060446357 |
申请日期 |
2006.06.05 |
申请人 |
MALEVILLE CHRISTOPHE;NEYRET ERIC;BEN MOHAMED NADIA |
发明人 |
MALEVILLE CHRISTOPHE;NEYRET ERIC;BEN MOHAMED NADIA |
分类号 |
H01L21/30;H01L21/762 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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地址 |
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