METHOD OF MANUFACTURING A FLOATING GATE IN NON-VOLATILE MEMORY DEVICE

摘要

A method of manufacturing a floating gate of a non-volatile memory device is provided to increase a coupling ratio by increasing an effective contact area between the floating gate and a dielectric layer. An auxiliary field insulating layer is projected from a surface of a substrate in order to generate an opening for exposing a part of the surface of the substrate(100). A conductive layer for floating gate is formed on an auxiliary field oxide layer pattern and the exposed substrate in order to fill up the opening. A node-separated auxiliary floating gate is formed by removing the conductive layer from the auxiliary field insulating layer. A field insulating layer pattern(122) is formed by etching a part of the auxiliary field insulating layer. A hemispheral grain is grown on the exposed surface of the auxiliary floating gate in order to form a floating gate(126).