| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light-emitting element capable of taking out light from a visible region to an ultraviolet region from the side of substrate by employing a Ga<SB>2</SB>O<SB>3</SB>substrate and reducing an increase in current density, and excellent in the take-out efficiency of light from the side of the substrate. <P>SOLUTION: The light-emitting element comprises the Ga<SB>2</SB>O<SB>3</SB>substrate and an epitaxial layer formed on the Ga<SB>2</SB>O<SB>3</SB>substrate with recessed and projected parts. Light emitted out of an active layer is reflected by the recessed and projected parts into various directions in the direction of the Ga<SB>2</SB>O<SB>3</SB>substrate whereby total reflection at the interface of the Ga<SB>2</SB>O<SB>3</SB>substrate is suppressed, thereby improving the take-out efficiency of light. <P>COPYRIGHT: (C)2008,JPO&INPIT |
