| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming features with desired profile and uniform critical dimension (CD) of the features across a substrate, by etching a metal material layer disposed on the substrate. SOLUTION: In one embodiment, a method for etching the material layer disposed on the substrate includes providing a substrate having a metal layer disposed on the substrate into an etch reactor, and flowing a gas mixture containing at least a chlorine containing gas and a passivation gas into the reactor. The passivation gas includes a nitrogen gas and an unsaturated hydrocarbon gas, wherein the nitrogen gas and the unsaturated hydrocarbon gas has a gas flow rate ratio between about 1:3 to about 20:1. The method includes etching the metal layer using a plasma formed from the gas mixture. COPYRIGHT: (C)2009,JPO&INPIT
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