METHOD AND APPARATUS FOR MODIFYING TITANIUM NITRIDE FILM
摘要
<p>Disclosed is a method for modifying a titanium nitride film wherein the specific resistance of a titanium nitride film is increased by irradiating the titanium nitride film formed on a semiconductor substrate with a plasma which is obtained by changing a process gas containing a rare gas or nitrogen but not containing oxygen into a plasma.</p>
申请公布号
WO2010010816(A1)
申请公布日期
2010.01.28
申请号
WO2009JP62461
申请日期
2009.07.08
申请人
TOKYO ELECTRON LIMITED;SUGAWARA, TAKUYA;SATO, YOSHIHIRO