METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE, SUBSTRATE PROCESSING APPARATUS AND PROGRAM

摘要

PROBLEM TO BE SOLVED: To form a metal carbide-based film with good step coverage.

SOLUTION: The following steps are alternately performed by a predetermined number of times: (i) a step of alternately supplying a first raw material containing a first metal element and a halogen element and a second raw material containing a second metal element and carbon to a substrate by a predetermined number of times; and (ii) a step of supplying a nitridation raw material to the substrate. As a result, a metal carbonitride film containing the first metal element having a predetermined thickness is formed on the substrate.

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