PROCESSING MATERIALS INSIDE AN ATMOSPHERIC-PRESSURE RADIOFREQUENCY NONTHERMAL PLASMA DISCHARGE

摘要

Apparatus (Fig.1,4) for the processing of materials involving placing a material (14, Fig.1) either placed between a radio-frequency electrode (13, Fig.1) and a ground electrode (11, Fig.1), or which is itself one of the electrodes (Fig.2). This is done in atmospheric pressure conditions. The apparatus effectively etches or cleans substrates, such as silicon wafers, or provides cleaning of spools and drums, and uses a gas containing an inert gas and a chemically reactive gas.