| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a trench-type metal oxide semiconductor (MOS) device that can control an increase in ON voltage in an ON state and improve breakable electric current without degrading switching characteristics. <P>SOLUTION: A MOS device includes vertical, parallel-stripe grooves, a plurality of island-shaped first conductive base areas, second conductive emitter areas, and an emitter electrode, provided on the surface of the MOS device. The first conductive base areas are formed between adjacent parallel grooves so as to come into contact with both grooves. The first conductive base areas are separated from each other and are shallower than the depth of the grooves. The second conductive emitter areas, provided on the surface of the base areas, each come into contact with one side of the adjacent parallel grooves. The second conductive emitter areas are separated from each other. The emitter electrode comes into contact with the base area and the emitter area. In the MOS device, side surfaces of a differing first conductive semiconductor area between the parallel grooves come into contact with both adjacent parallel grooves. In addition, the differing first conductive semiconductor area is separated from between the first conductive base areas positioned between the same parallel grooves. The differing first conductive semiconductor area is preferentially disposed between the parallel grooves close to a peripheral structure section and comes into contact with an emitter electrode film so as to be conductive. <P>COPYRIGHT: (C)2007,JPO&INPIT |
