发明名称 PROCESS FOR PREPARATION OF SILICON CARBIDE-BASED POROUS FILTER INCLUDING POST TREATMENT OF NITRATION REACTION
摘要 A method for manufacturing a silicon carbide-based porous filter is provided to prevent problems that heat resistance of the silicon carbide particles is deteriorated, and it is difficult to obtain a uniform particle distribution of the silicon carbide particles by performing a post-treatment in a nitrogen atmosphere after completing sintering, thereby changing silicon remained on joining parts between silicon carbide particles into silicon nitrides. As a method for manufacturing a silicon carbide(SiC)-based porous filter by extrusion, drying, plugging, and sintering, the method comprises the process of nitriding residual silicon by performing a heat treatment again in a nitrogen atmosphere after completing the sintering in a method for forming joining parts between silicon carbide particles by adding silicon and carbon as sintering additives. The joining parts comprising SiC as a principal component is formed by reacting the sintering additives during the sintering. The heat treatment is performed at a temperature of 1200 to 1800 deg.C. The residual silicon after the sintering is charged into carbon nitride(Si3N4) by the nitrification reaction. A silicon carbide-based porous filter comprises SiC as a principal component on joining parts between SiC particles, comprises Si3N4 as the other component, and does not consist of silicon.
申请公布号 KR20080066317(A) 申请公布日期 2008.07.16
申请号 KR20070003577 申请日期 2007.01.12
申请人 LG CHEM. LTD. 发明人 JEONG, YON HO;HAN, DAE GON;SEO, KI SIK
分类号 B01D39/00 主分类号 B01D39/00
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