MANUFACTURING METHOD FOR TFT SUBSTRATE AND STRUCTURE THEREOF

摘要

A manufacturing method for a TFT substrate and a structure thereof. The manufacturing method for the TFT substrate employs an n-type heavily doped connecting semiconductor (42) provided at a semiconductor layer to connect a first semiconductor (41) and a second semiconductor (43), thus linking a first TFT with a second TFT. The n-type heavily doped connecting semiconductor (42) replaces a connecting electrode provided on a second metal layer in the prior art, prevents the problem of reduced design rules for the connecting electrode and the second metal layer due to the connecting electrode and signal lines such as a data line and a voltage supply line being jointly provided on the second metal layer, and facilitates an increased aperture ratio and resolution of a display panel. Also provided is a TFT substrate structure, which is structurally simple and provides a high aperture ratio and a high resolution.