| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which can prevent recovery destruction at a termination part of an IGBT and inhibit snapback of a diode. <P>SOLUTION: A semiconductor device comprises P++ type collector layers 53 and N++ type cathode layers 54 formed on the same layer on a semiconductor substrate 32 including a P type channel layer 31 formed on an N- type drift layer 30, on one surface 34 side opposite to another surface 33 on the channel layer 31 side. Because the P++ type collector layer 53 is provided on peripheral parts 25 of a surface IGBT dedicated region 10 and a surface diode dedicated region 20 in an extension direction of a trench 35, the N++ type cathode layer 54 is laid out in a quadrangular shape. In addition, because the P++ type collector layer 53 is provided in a circular shape having a radius of a distance a from a termination part 39a of an emitter region 39, corners of the quadrangular shape are laid out in concave shapes. <P>COPYRIGHT: (C)2013,JPO&INPIT |
