| 摘要 |
PROBLEM TO BE SOLVED: To provide a dielectric memory which has a capacitive insulating film showing a superior step coverage, and has a structure enabling microfabrication. SOLUTION: The dielectric memory comprises first lower electrodes 12, a first insulating film 13 having openings 13h that reach the upper surfaces of the first lower electrodes 12, second lower electrodes 14b formed on the walls of the openings 13h, the capacitive insulating film 15 which is so formed above the first and second lower electrodes 12, 14b as not to fill the holes (openings 13h), and an upper electrode 16 formed on the capacitive insulating film 15. The film thickness of the second lower electrodes 14b to that of the openings 13h is made greater at the lower part than the upper part of the openings 13h. COPYRIGHT: (C)2006,JPO&NCIPI
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