MANUFACTURING METHOD OF METAL INSULATOR SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide the manufacturing method of a metal insulator semiconductor device in which compatibility of high dielectric strength and low cost is attained. SOLUTION: First, a N-type MCZ bulk substrate 10 is prepared. Next, a field oxide film 50, a P-diffused layer 41 and an N+diffused layer 31 are formed. Next, a gate wrench 21 is formed after silicon is exposed by removing a part of the field oxide film 50. Next, hydrogen annealing processing is performed with the silicon of a wall surface of the gate wrench 21 exposed. Next, an oxide film 24 is formed by performing thermal oxidation processing on the upper surface of a semiconductor substrate and wall surface of the gate wrench 21. Thereafter, a gate material 22 is deposited in a space in the gate wrench 21. Thereafter, a metal insulator semiconductor device is prepared by forming the P+diffused layer 11 or the like on the backside of the substrate. COPYRIGHT: (C)2006,JPO&NCIPI