| 摘要 |
PROBLEM TO BE SOLVED: To obtain a ridged semiconductor laser which is manufactured with good reproduction property and stability by minimizing stress fluctuation applied to the periphery of a ridge part, and reducing the fluctuation of a refractive index of an optical wave guide so as to reduce the variation range of the expansion angle of a lateral mode. SOLUTION: In the case of forming a p electrode 11 consisting of a group of metal films containing a Ti film 12, a prescribed amount of oxygen is introduced to a vacuum tank, depositing is carried out by an electronic beam vacuum evaporation method, and oxygen concentration contained in the Ti film 12 contacting with a group of semiconductor layers 9 is set to be 10 to 40 at% after thermal treatment. COPYRIGHT: (C)2006,JPO&NCIPI
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