| 摘要 |
PROBLEM TO BE SOLVED: To provide a structure in which a trade-off relation between voltage resistance and ON resistance (or ON voltage) is enhanced and a leak current is reduced in a longitudinal type semiconductor device including an electric field holding area between a pair of main electrodes. SOLUTION: A semiconductor device 10 comprises an electric field holding area 28 including a plurality of partial areas. The electric field holding area 28 comprises a first electric field holding partial area 24, an undepleted partial area 25, and a second electric field holding partial area 26. The first electric field holding partial area and the second electric field holding partial area have an SJ structure. The undepleted partial area 25 is an area that is not substantially completely depleted when the semiconductor device 10 is OFF. COPYRIGHT: (C)2007,JPO&INPIT
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