发明名称 PATTERN MANUFACTURING METHOD, PATTERN SUBSTRATE AND FIELD EFFECT TRANSISTOR
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method for controlling surface roughness of a micropattern in a molecular level without excessively increasing complication of manufacture. SOLUTION: The method has processes of: forming a projection pattern having a sidewall in a vertical direction with respect to a base layer in the base layer by photolithography; forming a deposition layer of aromatic organic compound on a surface of the projection pattern; performing anisotropic dry etching on the deposition layer so that the sidewall part in the vertical direction in the deposition layer is left; and performing anisotropic dry etching on the base layer with the sidewall part as a mask and forming the pattern on the base layer. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007242704(A) 申请公布日期 2007.09.20
申请号 JP20060059746 申请日期 2006.03.06
申请人 TOSHIBA CORP 发明人 SAITO SATOSHI;KOGA JUNJI
分类号 H01L29/786;H01L21/336 主分类号 H01L29/786
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