| 摘要 |
The invention relates to a facility (1) for plasma-assisted chemical vapour deposition, on an inner wall of a polymer container (2), of a thin barrier layer, and a method for adjusting said facility. The facility (1) comprises: a conductive recess (4); an enclosure (5) mounted in the recess (4); a device (9) for injecting a precursor gas into the enclosure (5); a microwave generator (15); and a device (24) for diffusing microwaves in the enclosure (5), connected to the microwave generator (15), in order to energise and maintain a plasma in the precursor gas; characterised in that the microwave generator (15) is a solid-state generator, provided with a variable frequency drive (22) for the microwave emission frequency; in that it comprises a sensor (13) arranged to measure a physical quantity characterising the energy intensity of the plasma produced in the container (2); and in that it comprises a control unit (14) connected to the sensor (13) and to the microwave generator (15), said control unit (14) being programmed to adjust the microwave emission frequency, via the variable frequency drive (22), in accordance with the value of the physical quantity characterising the energy intensity measured by the sensor (13). |
