| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device including a MOSFET which can reduce R<SB POS="POST">on</SB>in a low-current range and perform conductivity modulation in a heavy-current range, and which can control device characteristics to device characteristics appropriate for application, and provide a manufacturing method. <P>SOLUTION: A semiconductor device 1 comprises: an n<SP POS="POST">-</SP>type base layer 2; a p type base layer 4 partially formed on a surface part of the n<SP POS="POST">-</SP>type base layer 2; an n<SP POS="POST">+</SP>source layer 5 partially formed on a surface part of the p type base layer 4; a gate insulation film 6 formed on a surface of the p type base layer 4 between the n<SP POS="POST">+</SP>source layer 5 and the n<SP POS="POST">-</SP>type base layer 2; a gate electrode 7 opposed to the p type base layer 4 across the gate insulation film 6; a p type column layer 3 formed in the n<SP POS="POST">-</SP>type base layer 2 so as to continue to the p type base layer 4; a p<SP POS="POST">+</SP>type collector layer 10 partially formed on a rear face part of the n<SP POS="POST">-</SP>type base layer 2; a source electrode 8 electrically connected to the n<SP POS="POST">+</SP>source layer 5; and a drain electrode 11 electrically connected to the n<SP POS="POST">-</SP>base layer 2 and the p<SP POS="POST">+</SP>type collector layer 10. <P>COPYRIGHT: (C)2013,JPO&INPIT |
