| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a metalized substrate having a new structure, and capable of improving connection strength of wire bonding even after heating in mounting a semiconductor chip. <P>SOLUTION: This metalized substrate has, on a high-melting-point metal layer formed on a ceramic substrate, a base nickel plated layer, a layered nickel-phosphorus plated metal layer, a diffusion prevention plated layer and a gold plated layer in this order; any of a nickel plated layer, a nickel-boron plated layer and a nickel-cobalt plated layer is used for the base nickel plated layer; and any of a columnar nickel-boron plated layer, a palladium-phosphorus plated layer and a palladium plated layer is used for the diffusion prevention plated layer. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
