| 摘要 |
This disclosure is directed to aspect ratio modification via angled implantation. For a structure fabricated on a substrate during integrated circuit (IC) manufacture, achieving a certain target aspect ratio (AR) may be important for proper operation of the IC. The target AR may be based on internal dimensions of the structure (e.g., a magnetic tunnel junction). Fabricating the structure to have the target AR employing typical semiconductor fabrication operations may be difficult, expensive, etc. However, the requirements to achieve the target AR may be relaxed, and angled implantation may be used to modify the internal dimensions resulting from fabrication (e.g., a fabrication AR) to the target AR. For example, ions of amorphizing material may be accelerated at an angle into portions of the structure to deactivate at least some material in the structure, which may modify the fabrication AR to the target AR. |
