| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method for achieving a thinner semiconductor device than before. <P>SOLUTION: The manufacturing method of the semiconductor device 1, where a semiconductor element 11 and leads 101, 102, 103 are sealed by resin, includes a process for forming the leads 101, 102, 103, and a die-bonding process for mounting the semiconductor element 11 at a second concave section 22 by a back cutting process for forming a first concave section 21 at a first region on one surface of a conductive material sheet 20, and a surface punching process for forming the second concave section 22 at a second region on the other surface that opposes a region where the first concave section 21 of the conductive material sheet 20 is formed. The process for forming the first concave section 21 includes: a process for cutting a region where the first concave section 21 is formed; and a process for adjusting the precision of the first concave section 21 by punching after cutting. <P>COPYRIGHT: (C)2008,JPO&INPIT |
