MRAM ARCHITECTURES FOR INCREASED WRITE SELECTIVITY

摘要

MRAM architectures are disclosed that produce an increased write margin and write selectivity without significantly reducing the packing density of the memory. The major axes (122) of the magneto-resistive bits (100a, 100b, 100c, etc.) are offset relative to the axes of the digital lines (110a, 100b, etc.) to produce a magnetic field component (124) from the digital line current (132a, 132b, etc.) that extends along the major axis (122) magneto-resistive bits (100a, 100b, 100c, etc).