| 摘要 |
PROBLEM TO BE SOLVED: To easily achieve composition grading when a crystal of Al<SB>x</SB>Ga<SB>1-x</SB>N is grown using HVPE method by quickly and precisely setting the crystal composition ratio x. SOLUTION: The crystal growth of Al<SB>x</SB>Ga<SB>1-x</SB>N is carried out according to the HVPE method using aluminum material, gallium material, ammonia material, and a carrier gas. This epitaxy apparatus 110 comprises a hydrogen gas supplying port 30. H<SB>2</SB>+IG gas is introduced into the furnace via the hydrogen gas supplying port 30 to adjust the concentration of the hydrogen gas while keeping the concentrations of material gases constant. As a result, the hydrogen gas concentration in the growth can quickly be changed, so that the crystal composition ratio x in the growing crystal can quickly and precisely be set at the desired value. As a result, the composition grading can efficiently be executed. COPYRIGHT: (C)2007,JPO&INPIT
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