发明名称 |
Real-time gate etch critical dimension control by oxygen monitoring |
摘要 |
A process and apparatus for controlling an etchant gas concentration in an etch chamber. The etchant gas concentration and an inert gas concentration are determined and the latter concentration is used to normalize the etchant gas concentration. The normalized value is compared with a predetermined reference value and the flow of etchant gas into the chamber is controlled in response thereto. |
申请公布号 |
GB0420951(D0) |
申请公布日期 |
2004.10.20 |
申请号 |
GB20040020951 |
申请日期 |
2004.09.21 |
申请人 |
AGERE SYSTEMS INC |
发明人 |
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分类号 |
H01L21/3065;H01L21/00;H01L21/311;H01L21/3213;H01L21/8234 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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