| 摘要 |
A solid-state imaging device can improve a detection sensitivity of a signal detecting means by decreasing a parasitic capacity of a horizontal signal line. In a solid-state imaging device in which a plurality of pixels are arranged in a matrix fashion, a pixel signal is flowed through a horizontal switch ( 39 ) to a horizontal signal line ( 40 ) as a signal charge, and a signal is outputted by a signal detecting means connected to the end off the horizontal signal line ( 40 ), an insulating gate-type field-effect transistor comprising the horizontal switch ( 39 ) includes channels extended at least in two directions between its source electrode connected to the horizontal signal line ( 40 ) and other drain electrode.
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