发明名称 Field-aided preferential deposition of precursors
摘要 Area selective atomic layer deposition is provided by a method including the following steps. First, a substrate is provided. Second, a tip of a scanning probe microscope (SPM) is disposed in proximity to the surface of the substrate. An electrical potential is then established between the tip and the surface that cause one or more localized electrical effects in proximity to the tip. Deposition reactants for atomic layer deposition (ALD) are provided, and deposition occurs in a pattern defined by the localized electrical effects because of locally enhanced ALD reaction rates.
申请公布号 US8496999(B2) 申请公布日期 2013.07.30
申请号 US20090383588 申请日期 2009.03.24
申请人 DASGUPTA NEIL;PRINZ FRIEDRICH B.;HOLME TIMOTHY P.;WALCH STEPHEN;LEE WONYOUNG;MACK JAMES F.;THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY;HONDA MOTOR CO., LTD 发明人 DASGUPTA NEIL;PRINZ FRIEDRICH B.;HOLME TIMOTHY P.;WALCH STEPHEN;LEE WONYOUNG;MACK JAMES F.
分类号 C23C16/02 主分类号 C23C16/02
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