CMOS THIN FILM TRANSISTOR AND FABRICATING METHOD THEREOF

摘要

A CMOS thin film transistor and a manufacturing method thereof are provided to adjust a difference between channel doping doses of semiconductor layers of PMOS and NMOS thin film transistors. A buffer layer(110) is disposed on a substrate(101). A semiconductor layer(114b) of a PMOS thin film transistor comprising a doped channel, a source region and a drain region is positioned on the buffer layer, and a semiconductor layer(124b) of an NMOS thin film transistor having a doped channel, a source region, and a drain region is disposed on the buffer layer. A first gate insulation layer(112) is disposed on the semiconductor layers of the PMOS and NMOS transistors. A second gate insulating layer(115) is disposed at a region that is overlapped over any one of semiconductor layers of the PMOS and NMOS.